IEC 63068-1-ed.1.0

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

STANDARD published on 30.1.2019

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The information about the standard:

Designation standards: IEC 63068-1-ed.1.0
Publication date standards: 30.1.2019
The number of pages: 23
Approximate weight : 69 g (0.15 lbs)
Country: International technical standard
Category: Technical standards IEC

Annotation of standard text IEC 63068-1-ed.1.0 :

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.