Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
STANDARD published on 13.7.2020
Designation standards: IEC 63068-3-ed.1.0
Publication date standards: 13.7.2020
Approximate weight : 300 g (0.66 lbs)
Country: International technical standard
Category: Technical standards IEC
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers. L’IEC 63068-3:2020 decrit les definitions et les recommandations relatives a l’utilisation de la photoluminescence pour la detection de defauts bruts au sein de plaquettes homoepitaxiales en carbure de silicium (4H-SiC) disponibles dans le commerce. De plus, le present document donne des exemples d’images de photoluminescence et de spectres d’emission, permettant la detection et la categorisation des defauts au sein de plaquettes homoepitaxiales en SiC.