IEC 63068-4-ed.1.0

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

STANDARD published on 27.7.2022

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The information about the standard:

Designation standards: IEC 63068-4-ed.1.0
Publication date standards: 27.7.2022
Approximate weight : 300 g (0.66 lbs)
Country: International technical standard
Category: Technical standards IEC

Annotation of standard text IEC 63068-4-ed.1.0 :

IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.