We need your consent to use the individual data so that you can see information about your interests, among other things. Click "OK" to give your consent.
Standard Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage (Withdrawn 2003)
STANDARD published on 10.12.2002
Designation standards: ASTM F391-02
Note: WITHDRAWN
Publication date standards: 10.12.2002
SKU: NS-55133
The number of pages: 10
Approximate weight : 30 g (0.07 lbs)
Country: American technical standard
Category: Technical standards ASTM
Keywords:
diffusion length, minority carriers, polysilicon, silicon, single crystal silicon, surface photovoltag, ICS Number Code 29.045 (Semiconducting materials)
1. Scope |
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 These test methods cover the measurement of minority carrier diffusion lengths in specimens of extrinsic single-crystal semiconducting materials or in homoepitaxial layers of known resistivity deposited on more heavily doped substrates of the same type, provided that the thickness of the specimen or layer is greater than four times the diffusion length. 1.2 These test methods are based on the measurement of surface photovoltage (SPV) as a function of energy (wavelength) of the incident illumination. The following two test methods are described: 1.2.1 Test Method A—Constant magnitude surface photovoltage (CMSPV) method. 1.2.2 Test Method B—Linear photovoltage, constant photon flux (LPVCPF) method. 1.3 Both test methods are nondestructive. 1.4 The limits of applicability with respect to specimen material, resistivity, and carrier lifetime have not been determined; however, measurements have been made on 0.1 to 50 cm n- and p-type silicon specimens with carrier lifetimes as short as 2 ns. 1.5 These test methods were developed for use on single crystal specimens of silicon. They may also be used to measure an effective diffusion length in specimens of other semiconductors such as gallium arsenide (with suitable adjustment of the wavelength (energy) range of the illumination and specimen preparation procedures) and an average effective diffusion length in specimens of polysilicon in which the grain boundaries are normal to the surface. 1.6 These test methods also have been applied to the determination of the width of the denuded zone in silicon wafers. 1.7 These test methods measure diffusion lengths at room temperature (22°C) only. Lifetime and diffusion length are a function of temperature. 1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. |
Do you want to make sure you use only the valid technical standards?
We can offer you a solution which will provide you a monthly overview concerning the updating of standards which you use.
Would you like to know more? Look at this page.
Latest update: 2024-12-22 (Number of items: 2 217 000)
© Copyright 2024 NORMSERVIS s.r.o.