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ČSN EN 62979 (364655)
Photovoltaic module - Bypass diode - Thermal runaway test
Translate name
STANDARD published on 1.5.2018
The information about the standard:
Designation standards: ČSN EN 62979
Classification mark: 364655
Catalog number: 504095
Publication date standards: 1.5.2018
SKU: NS-845507
The number of pages: 24
Approximate weight : 72 g (0.16 lbs)
Country: Czech technical standard
Category: Technical standards ČSN
The category - similar standards:
Annotation of standard text ČSN EN 62979 (364655):
This document provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway. The test specimens which employ P/N diodes as bypass diodes are exempted from the thermal runaway test required herein, because the capability of P/N diodes to withstand the reverse bias is sufficiently high
Preview of the standard ČSN EN 62979 (364655)
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