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IEC 62276-ed.3.0
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
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STANDARD published on 24.10.2016
The information about the standard:
Designation standards: IEC 62276-ed.3.0
Publication date standards: 24.10.2016
SKU: NS-666559
The number of pages: 39
Approximate weight : 117 g (0.26 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 62276-ed.3.0 :
IEC 62276:2016 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators. This edition includes the following significant technical changes with respect to the previous edition: - Corrections of Euler angle indications in Table 1 and axis directions in Figure 3. - Definition of "twin" is not explained clearly enough in 3.3.3. Therefore it is revised by a more detailed definition. - Etch channels maximum number at quartz wafer of seed which do not pass through from surface to back surface are classified for three grades in 4.2.13 a). Users use seed portions of quartz wafers for devices. They request quartz wafers with less etch channels in seeds to reduce defects of devices. The classification of etch channels in seed may prompt a rise in quartz wafer quality. LIEC 62276:2016 sapplique a la fabrication de tranches monocristallines de quartz synthetique, de niobate de lithium (LN), de tantalate de lithium (LT), de tetraborate de lithium (LBO) et de silicate de gallium et de lanthane (LGS) destinees a etre utilisees comme substrats dans la fabrication de resonateurs et de filtres a ondes acoustiques de surface (OAS). La presente edition inclut les modifications techniques majeures suivantes par rapport a ledition precedente: - Corrections des indications de langle dEuler au Tableau 1 et des directions des axes a la Figure 3. - La definition de "cristal jumeau" netait pas expliquee de maniere suffisamment claire en 3.3.3. Elle a ete revisee par une definition plus detaillee. - Le nombre maximal de canaux de gravure dans un germe de tranche de quartz qui ne traverse pas de la surface avant a la surface arriere est determine pour trois classes en 4.2.13 a). Les utilisateurs utilisent des parties de germes de tranches de quartz pour les dispositifs. Ces tranches de quartz necessitent moins de canaux de gravure dans un germe pour reduire les defauts dans les dispositifs. La classification des canaux de gravure dans un germe peut necessiter une augmentation de la qualite des tranches de quartz.
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