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Photovoltaic modules - Bypass diode - Thermal runaway test
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STANDARD published on 10.8.2017
Designation standards: IEC 62979-ed.1.0
Publication date standards: 10.8.2017
SKU: NS-690128
The number of pages: 13
Approximate weight : 39 g (0.09 lbs)
Country: International technical standard
Category: Technical standards IEC
IEC 62979:2017 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway. lIEC 62979:2017 donne une methode permettant de determiner si la diode de derivation montee dans le module est susceptible de faire lobjet dun emballement thermique ou si le refroidissement est suffisant pour lui permettre de resister au passage entre un fonctionnement en polarisation directe et un fonctionnement en polarisation inverse sans surchauffe. Cette methodologie dessai est particulierement adaptee pour les diodes Schottky, qui ont la particularite daugmenter le courant de fuite en fonction de la tension de polarisation inverse a haute temperature, ce qui les rend plus propices a lemballement thermique.
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