Cookies
We need your consent to use the individual data so that you can see information about your interests, among other things. Click "OK" to give your consent.
IEC 63068-3-ed.1.0
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
Translate name
STANDARD published on 13.7.2020
The information about the standard:
Designation standards: IEC 63068-3-ed.1.0
Publication date standards: 13.7.2020
SKU: NS-998077
The number of pages: 51
Approximate weight : 153 g (0.34 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 63068-3-ed.1.0 :
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers. L’IEC 63068-3:2020 decrit les definitions et les recommandations relatives a l’utilisation de la photoluminescence pour la detection de defauts bruts au sein de plaquettes homoepitaxiales en carbure de silicium (4H-SiC) disponibles dans le commerce. De plus, le present document donne des exemples d’images de photoluminescence et de spectres d’emission, permettant la detection et la categorisation des defauts au sein de plaquettes homoepitaxiales en SiC.
We recommend:
Technical standards updating
Do you want to make sure you use only the valid technical standards?
We can offer you a solution which will provide you a monthly overview concerning the updating of standards which you use.
Would you like to know more? Look at this page.
