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IEC 63275-2-ed.1.0
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
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STANDARD published on 11.5.2022
The information about the standard:
Designation standards: IEC 63275-2-ed.1.0
Publication date standards: 11.5.2022
SKU: NS-1057218
The number of pages: 20
Approximate weight : 60 g (0.13 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 63275-2-ed.1.0 :
IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors. L’IEC 63275-2:2022 donne la methode d’essai et une procedure utilisant cette methode pour evaluer la derive de la tension a l’etat passant, la derive de la resistance a l’etat passant et la variation de tension de drain inverse des dispositifs MOSFET de puissance en carbure de silicium (SiC) en raison du fonctionnement de la diode intrinseque. Cet essai n’est generalement pas demande pour les transistors de puissance en Si.
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