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IEC 63284-ed.1.0
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
Translate name
STANDARD published on 21.4.2022
The information about the standard:
Designation standards: IEC 63284-ed.1.0
Publication date standards: 21.4.2022
SKU: NS-1055630
The number of pages: 25
Approximate weight : 75 g (0.17 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 63284-ed.1.0 :
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress LIEC 63284:2022 couvre le protocole dexecution dune procedure de contrainte et une methode dessai correspondante, en vue devaluer la fiabilite des transistors de puissance a base de nitrure de gallium (GaN) par la commutation sur charge inductive, en particulier la contrainte de commutation dure.
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