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IEC 63505-ed.1.0
Guidelines for measuring the threshold voltage (VT) of SiC MOSFETs
Translate name
STANDARD published on 8.4.2025
The information about the standard:
Designation standards: IEC 63505-ed.1.0
Publication date standards: 8.4.2025
SKU: NS-1218052
The number of pages: 12
Approximate weight : 36 g (0.08 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 63505-ed.1.0 :
IEC 63505:2025 gives guidance on VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. The method is applicable for PBTI testing, NBTI and threshold voltage changes caused by switching events are excluded from the scope. SiC MOSFETs have threshold voltage hysteresis caused by transient trap effects, which impacts the evaluation of the actual the VT shift caused by stress tests such as bias temperature instabilities (BTI).
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