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ČSN EN 62047-16 (358775)
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
Automatically translated name:
Semiconductor devices - Microelectromechanical devices - Part 16 : Test methods for determining residual stress layers MEMS - Methods of curvature of the plate and bending of the cantilever beam. ( In English , the text is part of the printout ).
STANDARD published on 1.9.2015
The information about the standard:
Designation standards: ČSN EN 62047-16
Classification mark: 358775
Catalog number: 98269
Publication date standards: 1.9.2015
SKU: NS-614166
The number of pages: 20
Approximate weight : 60 g (0.13 lbs)
Country: Czech technical standard
Category: Technical standards ČSN
The category - similar standards:
Semiconductor devices in generalElectromechanical components in general
Annotation of standard text ČSN EN 62047-16 (358775):
Tato norma popisuje metodu zkoušení pro stanovení zbytkového pnutí vrstev s tloušťkami v rozsahu 0,01 µm do 10 µm ve strukturách MEMS vytvořených metodou zakřivení desky nebo metodou ohybu konzolového nosníku. Vrstvy by měly být naneseny na substrát známých mechanických vlastností Youngova modulu a Poissonova poměru. Tyto metody slouží k určení zbytkového pnutí tenkých vrstev nanesených na substrátu
Preview of the standard ČSN EN 62047-16 (358775)
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