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Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films
STANDARD published on 14.3.2011
Designation standards: IEC 62047-8-ed.1.0
Publication date standards: 14.3.2011
SKU: NS-414115
The number of pages: 36
Approximate weight : 108 g (0.24 lbs)
Country: International technical standard
Category: Technical standards IEC
IEC 62047-8:2011 specifies the strip bending test method to measure tensile properties of thin films with high accuracy, repeatability, moderate effort of alignment and handling compared to the conventional tensile test. This testing method is valid for test pieces with a thickness between 50 nm and several mum, and with an aspect ratio (ratio of length to thickness) of more than 300. The hanging strip (or bridge) between two fixed supports are widely adopted in MEMS or micro-machines. It is much easier to fabricate these strips than the conventional tensile test pieces. The test procedures are so simple to be readily automated. This international standard can be utilized as a quality control test for MEMS production since its testing throughput is very high compared to the conventional tensile test. La CEI 62047-8:2011 specifie la methode dessai de flexion de bandes, afin de mesurer les proprietes de traction des couches minces avec une haute precision, repetabilite, un effort modere dalignement et de manipulation en comparaison de lessai de traction conventionnel. La methode dessai est valable pour les eprouvettes dessai dont lepaisseur est comprise entre 50 nm et plusieurs mum, et dont le rapport, (soit le rapport de la longueur de leprouvette a son epaisseur) est superieur 300. La bande suspendue (ou le pont) entre deux supports fixes est largement adoptee dans les MEMS ou dans les micromachines. Ces bandes sont bien plus faciles a fabriquer que les eprouvettes dessai a la traction conventionnelles. Les procedures dessai sont si simples quelles sont aisement automatisees. La presente norme internationale peut etre utilisee en tant quessai de controle de la qualite pour la production des MEMS etant donne que son debit dessai est tres eleve compare a lessai de traction conventionnel.
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