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IEC 62047-9-ed.1.0
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
STANDARD published on 13.7.2011
The information about the standard:
Designation standards: IEC 62047-9-ed.1.0
Publication date standards: 13.7.2011
SKU: NS-414117
The number of pages: 49
Approximate weight : 147 g (0.32 lbs)
Country: International technical standard
Category: Technical standards IEC
The category - similar standards:
Annotation of standard text IEC 62047-9-ed.1.0 :
IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy. La CEI 62047-9:2011 decrit une methode de mesure de la resistance de collage de deux plaquettes, le type de processus de liaison, par exemple le collage par fusion de deux plaquettes de silicium, le collage anodique dune plaquette de silicium et dune plaquette de verre, etc., et la taille de la structure applicable pendant le traitement ou lassemblage de systemes microelectromecaniques (MEMS). Lepaisseur de plaquette applicable est dans la gamme comprise entre 10 ohmm et plusieurs millimetres. Le contenu du corrigendum de mars 2012 a ete pris en consideration dans cet exemplaire.
These corrections apply to this standard:
IEC 62047-9-ed.1.0/Cor.1
Correction
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Corrigendum 1 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
(Corrigendum 1 - Dispositifs a semiconducteurs - Dispositifs microelectromecaniques - Partie 9: Mesure de la resistance de collage de deux plaquettes pour les MEMS)
Correction published on 8.3.2012
Selected format:Show all technical information.
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